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| SRAM Austin Semiconductor, Inc. 256K x 1 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS * SMD 5962-88725 * SMD 5962-88544 * MIL-STD-883 MT5C2561 PIN ASSIGNMENT (Top View) 24-Pin DIP (C) (300 MIL) A6 A7 A8 A9 A10 A11 A14 A15 A0 Q WE\ Vss 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 Vcc A5 A4 A3 A2 A1 A17 A16 A13 A12 D CE\ FEATURES * * * * High Speed: 35, 45, 55, and 70 Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process * Single +5V (+10%) Power Supply * Easy memory expansion with CE\ * All inputs and outputs are TTL compatible 28-Pin LCC (EC) * Timing 35ns access 45ns access 55ns access 70ns access * Package(s) Ceramic DIP (300 mil) Ceramic LCC A8 A7 A6 Vcc A17 3 2 1 28 27 26 25 24 23 22 21 20 19 18 13 14 15 16 17 A12 D CE\ Vss WE\ OPTIONS MARKING -35 -45 -55* -70* NC 4 A9 5 A10 6 A11 7 A14 8 A15 9 A0 10 Q 11 NC 12 NC A4 A3 A2 A1 A17 A16 A13 NC C EC No. 106 No. 204 * Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT * 2V data retention/low power L GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) on all organizations. This enhancement can place the outputs in High-Z for additional flexibility in system design. The x1 configuration features separate data input and output. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ goes LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. These devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. *Electrical characteristics identical to those provided for the 45ns access devices. For more products and information please visit our web site at www.austinsemiconductor.com MT5C2561 Rev. 2.5 1/01 1 SRAM Austin Semiconductor, Inc. MT5C2561 FUNCTIONAL BLOCK DIAGRAM VCC GND A13 A14 A15 A16 A17 A0 A1 A2 A3 A4 D ROW DECODER I/O CONTROL Q 262,144-BIT MEMORY ARRAY CE\ WE\ POWER DOWN COLUMN DECODER A5 A6 A7 A8 A9 A10 A11 A12 TRUTH TABLE MODE CE\ STANDBY H READ L WRITE L WE\ X H L DQ HIGH-Z Q HIGH-Z POWER STANDBY ACTIVE ACTIVE MT5C2561 Rev. 2.5 1/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 SRAM Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin Relative to Vss..................................-0.5V to +7V Voltage on Vcc Supply Relative to Vss.............................-0.5V to +7V Voltage Applied to Q.........................................................-0.5V to +6V Storage Temperature......................................................-65oC to +150oC Power Dissipation..............................................................................1W Short Circuit Output Current.........................................................50mA Lead Temperature (soldering 10 seconds)....................................+260oC Junction Temperature..................................................................+175oC MT5C2561 *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TC < 125oC; VCC = 5V +10%) DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage 0V CONDITIONS SYM ICCSP MAX -35 -45 120 120 UNITS NOTES mA 3 CE\ < VIL; VCC = MAX f = MAX = 1/tRC (MIN) Output Open ICCLP CE\ > VIH; All Other Inputs < VIL or > VIH, VCC = MAX f = 0 Hz CE\ > VCC -0.2V; VCC = MAX VIL < VSS +0.2V VIH > VCC -0.2V; f = 0 Hz "L" Version Only ISBT1 100 100 mA 3 Power Supply Current: Standby 25 25 mA ISBCSP ISBCLP 20 3 20 3 mA mA CAPACITANCE PARAMETER Input Capacitance Output Capacitance MT5C2561 Rev. 2.5 1/01 CONDITIONS TA = 25 C, f = 1MHz Vcc = 5V o SYM CI CO 3 MAX 10 12 UNITS pF pF NOTES 4 4 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. SRAM Austin Semiconductor, Inc. MT5C2561 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55oC < TC < 125oC; VCC = 5V +10%) DESCRIPTION READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Chip Enable to power-up time Chip disable to power-down time WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z -35 SYMBOL tRC tAA tACE tOH tLZCE tHZCE tPU tPD tWC tCW tAW tAS tAH tWP tDS tDH tLZWE tHZWE MIN 35 35 35 3 3 20 0 35 35 30 30 0 5 30 20 0 0 0 45 40 40 0 5 40 20 0 0 0 0 45 3 3 20 MAX MIN 45 45 45 -45 MAX UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns NOTES 7 6, 7 4 4 15 20 7 6, 7 MT5C2561 Rev. 2.5 1/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 SRAM Austin Semiconductor, Inc. AC TEST CONDITIONS Input pulse levels ...................................... Vss to 3.0V Input rise and fall times ......................................... 5ns Input timing reference levels ................................ 1.5V Output reference levels ....................................... 1.5V Output load ................................. See Figures 1 and 2 MT5C2561 167 Q 30pF VTH = 1.73V Q 167 5pF VTH = 1.73V Fig. 1 Output Load Equivalent Fig. 2 Output Load Equivalent NOTES 1. 2. 3. All voltages referenced to VSS (GND). -3V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. t RC (MIN) This parameter is guaranteed but not tested. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. tLZCE, tLZWE, tLZOE, tHZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured 200mV typical from steady state voltage, 4. 5. 6. allowing for actual tester RC time constant. At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE and tHZOE is less than tLZOE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enable is held in its active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = Read Cycle Time. 12. Chip enable (CE\) and write enable (WE\) can initiate and terminate a WRITE cycle. 7. DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) DESCRIPTION VCC for Retention Data CONDITIONS SYM VDR CE\ > (VCC - 0.2V) Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time VIN > (VCC - 0.2V) or < 0.2V VCC = 2V ICCDR 900 A MIN 2 MAX --UNITS V NOTES tCDR tR 0 tRC --- ns ns 4 4, 11 LOW Vcc DATA RETENTION WAVEFORM VCC t CDR DATA RETENTION MODE 4.5V VDR > 2V 4.5V tR VDR MT5C2561 Rev. 2.5 1/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 4321 4321 4321 4321 321 321 321 321 CE\ VIH VIL 4216 3326 32 87 421154321 332154321 87 421154321 321154321 87 3326 4876 987654321 4321 321 987654321 4321 987654321 987654321 321 DON'T CARE UNDEFINED SRAM Austin Semiconductor, Inc. MT5C2561 READ CYCLE NO. 1 ttRC RC ADDRESS VALID 8, 9 ttAA AA t OH tOH DQ PREVIOUS DATA VALID DATA VALID READ CYCLE NO. 2 7, 8, 10 ttRC RC CE\ ttLZCE LZCE tACE tACE DQ DATA VALID HZCE tHZCE t ttPU PU Icc ttPD PD MT5C2561 Rev. 2.5 1/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 SRAM Austin Semiconductor, Inc. WRITE CYCLE NO. 1 12 (Chip Enabled Controlled) WC tWC MT5C2561 t ADDRESS tAW tAW tAS tAS CE\ WE\ tCW tCW t WP tWP1 tDS tDS AH tAH t D Q DATA VAILD HIGH Z WRITE CYCLE NO. 2 7, 12 (Write Enabled Controlled) tWC tWC ADDRESS tAW tAW tCW tCW t AH tAH CE\ tAS tAS t WP tWP1 tDS t DH tDH WE\ Q HIGH-Z DON'T CARE UNDEFINED NOTE: Output enable (OE\) is inactive (HIGH). MT5C2561 Rev. 2.5 1/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 6 231 1 1543422 2 1 65432321 4111 1 65434111 431 2 1 15432321 6 222 432 4321 4321 1 4321 321 321 321 436543210987654321 1 2 432543210987654321 111 611 432543210987654321 1 6 211 436543210987654321 111 D tHZWE DATA VALID 321098765432109876543211 1 2 32109876543210987654321 1 32109876543210987654321 098765432121098765432109876543210987654321 098765432121098765432109876543210987654321 t DH tDH tLZWE 109876543210987654321 109876543210987654321 987654321 987654321 987654321 116543210987654321 27 1 2765432109876543 1 21 1 276543210987654321 2 SRAM Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #106 (Package Designator C) SMD #5962-88544 & #5962-88725, Case Outline L MT5C2561 D A Q Pin 1 b b2 L e S1 E NOTE 0o to 15o c eA SMD SPECIFICATIONS MIN MAX SYMBOL A --0.200 b 0.014 0.026 b2 0.045 0.065 c 0.008 0.018 D --1.280 E 0.220 0.310 eA 0.300 BSC e 0.100 BSC L 0.125 0.200 Q 0.015 0.060 S1 0.005 --NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. *All measurements are in inches. MT5C2561 Rev. 2.5 1/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 SRAM Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #204 (Package Designator EC) SMD# 5962-88544, Case Outline X D1 B2 D2 L2 MT5C2561 E3 e E E1 E2 h x 45o D hx45 o L B1 D3 A1 A SYMBOL A A1 B1 B2 D D1 D2 D3 E E1 E2 E3 e h L L2 SMD SPECIFICATIONS MIN MAX 0.060 0.120 0.050 0.088 0.022 0.028 0.072 REF 0.342 0.358 0.200 BSC 0.100 BSC --0.358 0.540 0.560 0.400 BSC 0.200 BSC --0.558 0.050 BSC 0.040 REF 0.045 0.055 0.075 0.095 NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. *All measurements are in inches. MT5C2561 Rev. 2.5 1/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 SRAM Austin Semiconductor, Inc. MT5C2561 ORDERING INFORMATION EXAMPLE: MT5C2561C-45L/IT Device Number MT5C2561 MT5C2561 MT5C2561 MT5C2561 Package Speed Options** Process Type ns C C C C -35 -45 -55 -70 L L L L /* /* /* /* EXAMPLE: MT5C2561EC-70/XT Device Number MT5C2561 MT5C2561 MT5C2561 MT5C2561 Package Speed Options** Process Type ns EC EC EC EC -35 -45 -55 -70 L L L L /* /* /* /* *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing ** OPTIONS L = 2V Data Retention/Low Power -40oC to +85oC -55oC to +125oC -55oC to +125oC MT5C2561 Rev. 2.5 1/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10 SRAM Austin Semiconductor, Inc. MT5C2561 ASI TO DSCC PART NUMBER CROSS REFERENCE* ASI Package Designator C ASI Part # MT5C2561C-35/883C MT5C2561C-45/883C MT5C2561C-55/883C MT5C2561C-70/883C MT5C2561C-35L883C MT5C2561C-45L883C MT5C2561C-55L883C MT5C2561C-70L883C SMD Part # 5962-8872501LX 5962-8872502LX 5962-8872503LX 5962-8872504LX 5962-8854401LX 5962-8854402LX 5962-8854403LX 5962-8854404LX ASI Package Designator EC ASI Part # MT5C2561EC-35/883C MT5C2561EC-45/883C MT5C2561EC-55/883C MT5C2561EC-70/883C MT5C2561EC-35L883C MT5C2561EC-45L883C MT5C2561EC-55L883C MT5C2561EC-70L883C SMD Part # 5962-8872501XX 5962-8872502XX 5962-8872503XX 5962-8872504XX 5962-8854401XX 5962-8854402XX 5962-8854403XX 5962-8854404XX * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. MT5C2561 Rev. 2.5 1/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11 |
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